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The carrier heating theory on the quantum dot Semiconductor Optical Amplifiers has not taken sufficient consideration despite the ample applications on the field of communication and data transfers. The models used to survey the carrier temperature depend on bulk ones, or empirical values and even quantum as they do not take into consideration all the effective factors working on the dynamic movement of the structures of quantum dot. In this study, a new model is offered to analyze the effect of carrier heating in Semiconductor Optical Amplifiers for a system consisting of two levels rate equation and depending on density Matrix theory, for this phenomenon is completely studied through nonlinear gain coefficient and carrier temperature in Wetting Layer. The effect of the carrier relaxation time results from the phenomena of the nonlinear and capture time as well for the rate of the occupation quantum and the time growth of the gain, all of which are theoretically investigated and fully discussed concerning the definite system where the number of amounts is calculated in such a way as to observe that the occupation probability is seen increasing alongside the relaxation time of carrier temperature, while it is decreasing alongside the increasing amount of the carriers of capture time. The reverse of the process comes true as far as the recovery time is concerned. Throughout the task, a comparison has been carried out between the nonlinear gain coefficient in the case of the bulk model and another quantum, so it is observed that the two models have been applied in the case of lower carrier density, whereas the nonlinear gain coefficient perform less acting or conducting than it is in the case of the quantum model concerning a higher carrier density. The study concentrates, throughout the task, on the amount of the degree of carrier temperature in the wetting layer in InAs/InGaAs/GaAs, for it is observed that the carrier temperature increases alongside the increase of the relaxation time of the nonlinear processes represented by carrier heating and spectral hole burning, while it is decreasing alongside the increase of the carriers of capture time from the reservoir to the quantum dots levels upto the temperature balance with the lattice temperature. The degree of the temperature of barrier is also calculated along with the structure of wetting layer. The results and outcomes of the theory have demonstrated that the degree of the temperature of barrier is higher than the quantum structure of wetting layer. Notice that all the programs are designed and taken in Nassiriya Nanotechnology Taboratory at science college, and implemented in matlab language.
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