Investigation and Fabrication of Nio Nps for Solar Cells Applications
| المصدر: | مجلة كلية التربية |
|---|---|
| الناشر: | الجامعة المستنصرية - كلية التربية |
| المؤلف الرئيسي: | Abd, Mohamed Ali (Author) |
| مؤلفين آخرين: | Ali, Anwar Hussein (Co-Author) , Abd, Ahmed N. (Co-Author) |
| المجلد/العدد: | ع1 |
| محكمة: | نعم |
| الدولة: |
العراق |
| التاريخ الميلادي: |
2020
|
| الصفحات: | 447 - 456 |
| ISSN: |
1812-0380 |
| رقم MD: | 1235667 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | EduSearch |
| مواضيع: | |
| كلمات المؤلف المفتاحية: |
Nickel Oxide | XRD | AFM | Solar Cell
|
| رابط المحتوى: |
الناشر لهذه المادة لم يسمح بإتاحتها. |
| المستخلص: |
Search submitted, Nickel oxide (NiO) thin films, which was prepared by chemical method and deposited by drop casting technique on glass substrate have been studied. The structural, optical and chemical analysis were investigated. X-ray diffraction (XRD) measurements reveal that the Nickel oxide (NiO) thin film was polycrystalline, face center cubic structure and there is no trace of the other material. UV-Vis measurements assure that the energy gap of NiO thin film was found to be 3.8 eV, In addition to test scanning electron microscopy (SEM), also the nan crystalline Porous Silicon wafers is make through electrochemical etching(ECE) of p-type silicon wafer by 10 mA/cm2 current density with 10 minute etching interval onto the forming man-sized porosity collection. The size of the pores was calculated from XRD and AFM, which confirmed the appearance of the Nan scale for the chemical analysis of Psi. I-V characterization of the solar cell under illumination at 40uW/cm² influence was investigated. The open circuit voltage (Voc) was 3.12 V and short-circuit current (Isc) was 6 uA. These measurements exhibition the transformation proficiency (n) with the Fill Factor (FF), have being 8.31% and 49.35% consecutively. |
|---|---|
| ISSN: |
1812-0380 |
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