The Luminescence In Si-Ge Quantum Wells at Room Temperature
| المصدر: | المجلة الجامعة |
|---|---|
| الناشر: | جامعة الزاوية - مركز البحوث والدراسات العليا |
| المؤلف الرئيسي: | Elfurdag, Jamal S. (Author) |
| المجلد/العدد: | مج17, ع2 |
| محكمة: | نعم |
| الدولة: |
ليبيا |
| التاريخ الميلادي: |
2015
|
| الشهر: | أغسطس |
| الصفحات: | 25 - 34 |
| رقم MD: | 1263791 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | EduSearch, EcoLink, IslamicInfo, AraBase, HumanIndex |
| مواضيع: | |
| رابط المحتوى: |
الناشر لهذه المادة لم يسمح بإتاحتها. |
| المستخلص: |
We present the results of a computational study to investigate the Photoluminescence from an effectively isolated Gem- Sin- Gem structure. This structure has been demonstrated at room temperature(l). Experimental measurements have shown that this luminescence is associated with the four-fold degenerate conduction minima which lie in the plane of the interface. This paper shows that the observed luminescence cannot be explained by the popular alloy scattering interpretation, or by what is commonly called the zone-folding model. We propose an alternative mechanism which links the luminescence to anomalous localization at the heterointerfaces. |
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