المستخلص: |
This study aims to measure the effect of temperature on the performance of silicon based photovoltaic cells. A given cell was placed in a test unit and exposed to a constant 1000W/m2 radiation source. The temperature of the cell could be modified using a blower with a heating element. For a range of temperature between 30°C and 60°C a data acquisition system obtained the I-V characteristic for the cell. The data show that an increase in temperature leads to increase slightly in the short circuit current, decrease in the open-circuit voltage and a decrease in efficiency. These findings are similar to previous work.
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