Effect of Barrier Height Variations on SE Dopant Contrast
| المصدر: | مجلة الساتل |
|---|---|
| الناشر: | جامعة مصراتة |
| المؤلف الرئيسي: | Zaggout, F. N. (Author) |
| مؤلفين آخرين: | El Gomati, M. M. (Co-Author) |
| المجلد/العدد: | س7, ع10 |
| محكمة: | نعم |
| الدولة: |
ليبيا |
| التاريخ الميلادي: |
2013
|
| الشهر: | ديسمبر |
| الصفحات: | 79 - 92 |
| رقم MD: | 766634 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | HumanIndex |
| مواضيع: | |
| رابط المحتوى: |
عدد مرات التحميل
3
| المستخلص: |
The physical mechanism responsible for the SE dopant contrast is not fully understood. However, several hypotheses (models) have been suggested. Formation of m-s contact of barrier height based on the difference between the metal work function and electron affinity of the semiconductor is one of the mechanisms which is suggested to be responsible for this contrast. In this paper, the validity of the m-s contact model on SE contrast is further investigated in Si to clarify the effect of barrier height variations of Al/Si diodes by heat treatment on the SE dopant contrast. The barrier height variations have been estimated using KPM. An inverted contrast of Al covered structure has been obtained due to annealing showing dependence of the SE contrast on the barrier height variations and supporting m-s contact model |
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