Electrodeposition of Semiconductors CuInTe2, Thin Film Solar Cells
| المصدر: | مجلة التربوي |
|---|---|
| الناشر: | جامعة المرقب - كلية التربية بالخمس |
| المؤلف الرئيسي: | Muftah, G. E. A. (Author) |
| مؤلفين آخرين: | Alshuaib, A. M. (Co-Author) , Ashmila, E. M. (Co-Author) |
| المجلد/العدد: | ع13 |
| محكمة: | نعم |
| الدولة: |
ليبيا |
| التاريخ الميلادي: |
2018
|
| الشهر: | يوليو |
| الصفحات: | 345 - 355 |
| ISSN: |
2011-421X |
| رقم MD: | 943877 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | EduSearch |
| مواضيع: | |
| كلمات المؤلف المفتاحية: |
Electrodeposition of Semiconductors | CuInTe2 | Thin film solar cells
|
| رابط المحتوى: |
عدد مرات التحميل
12
| المستخلص: |
Copper indium ditelluride (CuInTe2) has been electrochemically deposited from aqueous solution. Cyclic voltammetry analyses were used to determine suitable deposition parameters. pH-potential diagram was drawn to provide information on the chemical reactions taking place at different deposition potentials and pH. As measured by Talysurf and gravimetric techniques, the thickness of deposited films was found to be ~2.0 μm, when deposited over a period of 3 hrs. X-ray diffraction, and optical absorption have been used to investigate the bulk structure, energy band gap of the material layers respectively. It was found that it has polycrystalline chalcopyrite structure with band gap varied between 1.10 and 1.30 eV. |
|---|---|
| ISSN: |
2011-421X |
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