المصدر: | مجلة التربوي |
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الناشر: | جامعة المرقب - كلية التربية بالخمس |
المؤلف الرئيسي: | Saleh, Ibrahim A. (Author) |
مؤلفين آخرين: | Saleh, Abdelnaser S. (Co-Author) , Elzawiei, Youssif S. M. (Co-Author) , Boukhrais, Farag Gait Abdelrhman (Co-Author) |
المجلد/العدد: | ع20 |
محكمة: | نعم |
الدولة: |
ليبيا |
التاريخ الميلادي: |
2022
|
الشهر: | يناير |
الصفحات: | 683 - 693 |
ISSN: |
2011-421X |
رقم MD: | 1249564 |
نوع المحتوى: | بحوث ومقالات |
اللغة: | الإنجليزية |
قواعد المعلومات: | EduSearch |
مواضيع: | |
كلمات المؤلف المفتاحية: |
Doped | Nano-Multilayers (Nmls) | A-Si:H/A-Ge | (Hydrogen Content (NH | Structure | Crystallization | Optical Properties
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رابط المحتوى: |
المستخلص: |
Doped-nanomultilayers of a-Si:H/a-Ge:H thin films are used as a new type of narrow band gap materials for amorphous silicon–based solar cells. High efficiency solar cells are necessary to convert solar energy to electrical energy at low cost until. Doped-nanomultilayers of a-Si:H/a-Ge: H were prepared at 200◦C by alternating deposition from SiH4 and GeH4 plasmas in a computer-controlled four chamber glow-discharge deposition system with capacitively coupled diode reactors . IR, XRD and SEM were used to study the structural changes after annealing at 300 for 8h. The annealed doped-nanomultilayers exhibit surface and bulk degradation with formation of bumps and craters. The measurements results reveal that the optical energy gap is decreased with increasing the annealing temperature and/or time is partially due to formation of H bubbles in the Ge layers and partially due to crystallization effects. |
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ISSN: |
2011-421X |