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Influence of Hydrogen Content on Structural and Optical Properties of Doped Nano-A-Si:H/A-Ge: H Multilayers Used in Solar Cells

المصدر: مجلة التربوي
الناشر: جامعة المرقب - كلية التربية بالخمس
المؤلف الرئيسي: Saleh, Ibrahim A. (Author)
مؤلفين آخرين: Saleh, Abdelnaser S. (Co-Author), Elzawiei, Youssif S. M. (Co-Author), Boukhrais, Farag Gait Abdelrhman (Co-Author)
المجلد/العدد: ع20
محكمة: نعم
الدولة: ليبيا
التاريخ الميلادي: 2022
الشهر: يناير
ISSN: 2011-421X
رقم MD: 1249564
نوع المحتوى: بحوث ومقالات
اللغة: الإنجليزية
قواعد المعلومات: EduSearch
مواضيع:
كلمات المؤلف المفتاحية:
Doped | Nano-Multilayers (Nmls) | A-Si:H/A-Ge | Hydrogen Content (NH | Structure | Crystallization | Optical Properties
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المستخلص: Doped-nanomultilayers of a-Si:H/a-Ge:H thin films are used as a new type of narrow band gap materials for amorphous silicon–based solar cells. High efficiency solar cells are necessary to convert solar energy to electrical energy at low cost until. Doped-nanomultilayers of a-Si:H/a-Ge: H were prepared at 200◦C by alternating deposition from SiH4 and GeH4 plasmas in a computer-controlled four chamber glow-discharge deposition system with capacitively coupled diode reactors . IR, XRD and SEM were used to study the structural changes after annealing at 300 for 8h. The annealed doped-nanomultilayers exhibit surface and bulk degradation with formation of bumps and craters. The measurements results reveal that the optical energy gap is decreased with increasing the annealing temperature and/or time is partially due to formation of H bubbles in the Ge layers and partially due to crystallization effects.

ISSN: 2011-421X