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|a eng
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|b ليبيا
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|9 625030
|a Saleh, Ibrahim A.
|e Author
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|a Influence of Hydrogen Content on Structural and Optical Properties of Doped Nano-A-Si:H/A-Ge:
|b H Multilayers Used in Solar Cells
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|b جامعة المرقب - كلية التربية بالخمس
|c 2022
|g يناير
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|a 683 - 693
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|a بحوث ومقالات
|b Article
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|b Doped-nanomultilayers of a-Si:H/a-Ge:H thin films are used as a new type of narrow band gap materials for amorphous silicon–based solar cells. High efficiency solar cells are necessary to convert solar energy to electrical energy at low cost until. Doped-nanomultilayers of a-Si:H/a-Ge: H were prepared at 200◦C by alternating deposition from SiH4 and GeH4 plasmas in a computer-controlled four chamber glow-discharge deposition system with capacitively coupled diode reactors . IR, XRD and SEM were used to study the structural changes after annealing at 300 for 8h. The annealed doped-nanomultilayers exhibit surface and bulk degradation with formation of bumps and craters. The measurements results reveal that the optical energy gap is decreased with increasing the annealing temperature and/or time is partially due to formation of H bubbles in the Ge layers and partially due to crystallization effects.
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|a الطاقة الكهربائية
|a الطاقة الشمسية
|a الطبقات النانوية
|a الخلايا الشمسية
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692 |
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|b Doped
|b Nano-Multilayers (Nmls)
|b A-Si:H/A-Ge
|b (Hydrogen Content (NH
|b Structure
|b Crystallization
|b Optical Properties
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700 |
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|9 666699
|a Saleh, Abdelnaser S.
|e Co-Author
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700 |
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|9 666700
|a Elzawiei, Youssif S. M.
|e Co-Author
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700 |
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|9 666703
|a Boukhrais, Farag Gait Abdelrhman
|e Co-Author
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773 |
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|4 التربية والتعليم
|6 Education & Educational Research
|c 038
|l 020
|m ع20
|o 1568
|s مجلة التربوي
|t Educational Journal
|v 000
|x 2011-421X
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856 |
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|u 1568-000-020-038.pdf
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930 |
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|d y
|p y
|q n
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|a EduSearch
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|c 1249564
|d 1249564
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