المستخلص: |
In this study, the morphological and structural properties of ZnO seed layer deposited on Si and Teflon substrates were comparatively analyzed. The effect of annealing process on the properties of the deposited ZnO thin films was also evaluated. Morphological and structural properties of ZnO films deposited on Si and PTFE substrates were studied using FESEM, AFM and XRD. Results revealed that the heat treatment is an important process to re-crystallizeZnO layer on both of the substrates. The best characterization results were achieved at annealing temperature of 300°C. Moreover, the root mean square was the highest for the ZnO layer deposited on PTFE substrate. The current study confirmed the importance of the annealing process in improving the crystalline structure of ZnO seed layer.
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