The Effect of an Electric Field on Optical Spectra in Electronic Structures of Si-Si1-x Gex Quantum Well
| المصدر: | المجلة الجامعة |
|---|---|
| الناشر: | جامعة الزاوية - مركز البحوث والدراسات العليا |
| المؤلف الرئيسي: | Elfurdag, Jamal S. (Author) |
| المجلد/العدد: | مج17, ع3 |
| محكمة: | نعم |
| الدولة: |
ليبيا |
| التاريخ الميلادي: |
2015
|
| الشهر: | سبتمبر |
| الصفحات: | 87 - 100 |
| رقم MD: | 1264273 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | EduSearch, EcoLink, IslamicInfo, AraBase, HumanIndex |
| مواضيع: | |
| رابط المحتوى: |
الناشر لهذه المادة لم يسمح بإتاحتها. |
| المستخلص: |
In this paper we apply technique to strained quantum well structures, and to show the effect of strong external electric field up to 5× 105 Vcm-1 upon electronic structure and optical spectra of Si-Si1-x Gex quantum well structures. This will provide us with an opportunity to present the microscopic picture of optical transition probabilities and the transmission probabilities for transport between wells. We have focused on the states derived from the lowest conduction band and on the states derived from the uppermost valence band. In the absence of an external electric field and under influence of an external electric field. We find that results differ from the predictions based on idealized models. |
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