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The Effect of Cadmium Content Increment on Optoelectronic Properties of the Si10Ge10Zn80-Xcdx System

المصدر: مجلة التربوي
الناشر: جامعة المرقب - كلية التربية بالخمس
المؤلف الرئيسي: Saleh, Ibrahim A. (Author)
المجلد/العدد: ع25
محكمة: نعم
الدولة: ليبيا
التاريخ الميلادي: 2024
الشهر: يوليو
الصفحات: 48 - 59
ISSN: 2011-421X
رقم MD: 1489079
نوع المحتوى: بحوث ومقالات
اللغة: الإنجليزية
قواعد المعلومات: EduSearch
مواضيع:
كلمات المؤلف المفتاحية:
System | Si10 Ge10 Zn80-X Cdx | Annealing | Crystallization | Optical Band Gap
رابط المحتوى:
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LEADER 02364nam a22002177a 4500
001 2232560
041 |a eng 
044 |b ليبيا 
100 |9 625030  |a Saleh, Ibrahim A.  |e Author 
245 |a The Effect of Cadmium Content Increment on Optoelectronic Properties of the Si10Ge10Zn80-Xcdx System 
260 |b جامعة المرقب - كلية التربية بالخمس  |c 2024  |g يوليو 
300 |a 48 - 59 
336 |a بحوث ومقالات  |b Article 
520 |b In this article, we study the effect of increasing cadmium content on optoelectronic properties, as we know that cadmium the same zinc group (group 12), so it has similar properties. The thin films for Si10Ge10Zn80-xCdx system (where x=5&15) were studied in the temperature range from 35 to 400 ˚C. This system of two samples were prepared was deposited on borosilicate glass substrates. The two configurations of multilayers are pure silicon (Si), germanium (Ge), and Zinc (Zn) at high concentration, doped of Cadmium (Cd) (Cd-doped). The influence of annealing on the structure and stability of the samples has been studied by X-ray diffraction. The changes in optoelectronic properties are attributed partially to decreasing the optical band gap Eg and increasing the Urbach energy Eu with increasing ratio of doped of (Cd) (Cd-doped) to the high concentration of Zinc (Zn). The doping has a great effect on the Eg and Eu, found that Cd-doping increase, the energy gap decreasing from 0.94 to 0.76 eV. Another reason for the changes in the energy gap Eg and the Urbach energy Eu is the crystallization, it is occur only in Ge matrix because the crystallizing temperature of the germanium (about 300°C). This effect is not clear with increasing cadmium doping due to the stability of the sample composition. It has been shown their conductivity also increase with annealing and increasing the ratio of Cd-doped zinc concentration. 
653 |a الخواص الكيميائية  |a عنصر الكادميوم  |a درجات الحرارة 
692 |b System  |b Si10 Ge10 Zn80-X Cdx  |b Annealing  |b Crystallization  |b Optical Band Gap 
773 |4 التربية والتعليم  |6 Education & Educational Research  |c 003  |l 025  |m ع25  |o 1568  |s مجلة التربوي  |t Educational Journal  |v 000  |x 2011-421X 
856 |u 1568-000-025-003.pdf 
930 |d y  |p y  |q n 
995 |a EduSearch 
999 |c 1489079  |d 1489079