Manufacturing and Testing a New Solar Cell
| المؤلف الرئيسي: | Al Qurashi, Rania (Author) |
|---|---|
| مؤلفين آخرين: | Gehring, Gillian (Advisor) , Fox, Mark (Advisor) |
| التاريخ الميلادي: |
2012
|
| موقع: | شفيلد |
| الصفحات: | 1 - 45 |
| رقم MD: | 752118 |
| نوع المحتوى: | رسائل جامعية |
| اللغة: | الإنجليزية |
| الدرجة العلمية: | رسالة ماجستير |
| الجامعة: | University of Sheffield |
| الكلية: | Faculty of Science |
| الدولة: | بريطانيا |
| قواعد المعلومات: | +Dissertations |
| مواضيع: | |
| رابط المحتوى: |
الناشر لهذه المادة لم يسمح بإتاحتها. |
| المستخلص: |
II-VI wide bandgap semiconductors show great promise for applications demanding efficient, inexpensive solar cells.A novel system that should work as a solar cell has been fabricated using thin films of n-type ZnO and p-type ZnTe. The ZnTe/ZnO solar cells were deposited on sapphire and glass substratesusing XeCl (308nm) pulsed laser ablation of stoichiometric ZnTe and ZnO targets. Molecular nitrogen at various pressures was introduced during the deposition of the ZnTe layer to give acceptors. The electrical and optical properties of individual ZnO and ZnTe layers were characterised at room temperature. The bilayer grown at 400 and 350 ℃ for ZnO and ZnTe layer, respectively. The thicknesses of the solar cells were 166 and 380 nm. The formation of the p-n junction was investigated using an absorption spectroscopy, revealing a clear transition between the bandgap of constituent materials. The I-V characterisations for the p-ZnTe/n-ZnO solar cell wereperformed using a solar cell stimulator, showingan ohmic rectification.Thus the power conversion efficiency of the prepared cellswas zero. Finally, improvements of the procedures were suggested. |
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