In-Depth Simulation Analysis Of The Si-Sio2 Interface Traps By The Charge Pumping
| المصدر: | مجلة آفاق علمية |
|---|---|
| الناشر: | المركز الجامعي أمين العقال الحاج موسى أق أخموك بتامنغست |
| المؤلف الرئيسي: | Sellami, M. (Auth) |
| مؤلفين آخرين: | Sellami, A. (Co-Auth) |
| المجلد/العدد: | ع10 |
| محكمة: | نعم |
| الدولة: |
الجزائر |
| التاريخ الميلادي: |
2015
|
| الشهر: | جوان |
| الصفحات: | 1 - 9 |
| DOI: |
10.35554/1697-000-010-001 |
| ISSN: |
1112-9336 |
| رقم MD: | 1029376 |
| نوع المحتوى: | بحوث ومقالات |
| اللغة: | الإنجليزية |
| قواعد المعلومات: | EduSearch |
| مواضيع: | |
| رابط المحتوى: |
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| المستخلص: |
The purpose of this work is to contribute to a better electrical characterization of the Silicon-Oxide interface By the Three level charge pmping. The introduction of a third voltage level in the gate pulse gives access to the same parameters as the two charge pumping but requires less simplifying assumptions. We show that the three charge pumping and its variants are powerful tools to determine the Dit (E) and σ (E) distribution. The simulated results are in a good agreement with recent and different experimental results |
|---|---|
| ISSN: |
1112-9336 |
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